Browsing by Author "Srivastava, Viranjay M."

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    Capacitive Model and S-Parameters of Double-Pole Four-Throw Double-Gate RF CMOS Switch
    (Scientific Research Publishing, 2011-01) Srivastava, Viranjay M.; Yadav, Kalyan S.; Singh, Ghanashyam
    In this paper, we have analyzed the Double-Pole Four-Throw Double-Gate Radio-Frequency Complementary Metal-Oxide-Semiconductor (DP4T DG RF CMOS) switch using S-parameters for 1 GHz to 60 GHz of frequency range. DP4T DG RF CMOS switch for operation at high frequency is also analyzed with its capacitive model. The re-sults for the development of this proposed switch include the basics of the circuit elements in terms of capacitance, re-sistance, impedance, admittance, series equivalent and parallel equivalent of this network at different frequencies which are present in this switch whatever they are ON or OFF.
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    Performance of Double-Pole Four-Throw Double-Gate RF CMOS Switch in 45-nm Technology
    (Scientific Research Publishing, 2010-10) Srivastava, Viranjay M.
    In this paper, we have investigated the design parameters of RF CMOS switch, which will be used for the wireless tele-communication systems. A double-pole four-throw double-gate radio-frequency complementary-metal-oxide-semicon- ductor (DP4T DG RF CMOS) switch for operating at the 1 GHz is implemented with 45-nm CMOS process technology. This proposed RF switch is capable to select the data streams from the two antennas for both the transmitting and receiving processes. For the development of this DP4T DG RF CMOS switch we have explored the basic concept of the proposed switch circuit elements required for the radio frequency systems such as drain current, threshold voltage, resonant frequency, return loss, transmission loss, VSWR, resistances, capacitances, and switching speed.