Browsing by Author "Singh, Ghanashyam"

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    Capacitive Model and S-Parameters of Double-Pole Four-Throw Double-Gate RF CMOS Switch
    (Scientific Research Publishing, 2011-01) Srivastava, Viranjay M.; Yadav, Kalyan S.; Singh, Ghanashyam
    In this paper, we have analyzed the Double-Pole Four-Throw Double-Gate Radio-Frequency Complementary Metal-Oxide-Semiconductor (DP4T DG RF CMOS) switch using S-parameters for 1 GHz to 60 GHz of frequency range. DP4T DG RF CMOS switch for operation at high frequency is also analyzed with its capacitive model. The re-sults for the development of this proposed switch include the basics of the circuit elements in terms of capacitance, re-sistance, impedance, admittance, series equivalent and parallel equivalent of this network at different frequencies which are present in this switch whatever they are ON or OFF.