Performance of Double-Pole Four-Throw Double-Gate RF CMOS Switch in 45-nm Technology

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dc.contributor.authorSrivastava, Viranjay M.
dc.date.accessioned2016-10-26T11:24:55Z
dc.date.available2016-10-26T11:24:55Z
dc.date.issued2010-10
dc.description.abstractIn this paper, we have investigated the design parameters of RF CMOS switch, which will be used for the wireless tele-communication systems. A double-pole four-throw double-gate radio-frequency complementary-metal-oxide-semicon- ductor (DP4T DG RF CMOS) switch for operating at the 1 GHz is implemented with 45-nm CMOS process technology. This proposed RF switch is capable to select the data streams from the two antennas for both the transmitting and receiving processes. For the development of this DP4T DG RF CMOS switch we have explored the basic concept of the proposed switch circuit elements required for the radio frequency systems such as drain current, threshold voltage, resonant frequency, return loss, transmission loss, VSWR, resistances, capacitances, and switching speed.en_US
dc.identifier.citationWireless Engineering and Technology , 2010, 1, 47-54en_US
dc.identifier.urihttp://dx.doi.org/10.4236/wet.2010.12008
dc.identifier.urihttp://hdl.handle.net/123456789/1059
dc.language.isoenen_US
dc.publisherScientific Research Publishingen_US
dc.subject45-nm Technologyen_US
dc.subjectCapacitance of Double-Gate MOSFETen_US
dc.subjectDG MOSFETen_US
dc.subjectDP4T Switchen_US
dc.subjectRadio Frequencyen_US
dc.subjectRF Switchen_US
dc.subjectResistance of Double-Gate MOSFETen_US
dc.subjectVLSIen_US
dc.titlePerformance of Double-Pole Four-Throw Double-Gate RF CMOS Switch in 45-nm Technologyen_US
dc.typeArticleen_US
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