Capacitive Model and S-Parameters of Double-Pole Four-Throw Double-Gate RF CMOS Switch

Srivastava, Viranjay M.Yadav, Kalyan S.Singh, Ghanashyam2016-10-272016-10-272011-01Wireless Engineering and Technology, 2011, 2, 15-22http://dx.doi.org/10.4236/wet.2011.21003http://hdl.handle.net/123456789/1072In this paper, we have analyzed the Double-Pole Four-Throw Double-Gate Radio-Frequency Complementary Metal-Oxide-Semiconductor (DP4T DG RF CMOS) switch using S-parameters for 1 GHz to 60 GHz of frequency range. DP4T DG RF CMOS switch for operation at high frequency is also analyzed with its capacitive model. The re-sults for the development of this proposed switch include the basics of the circuit elements in terms of capacitance, re-sistance, impedance, admittance, series equivalent and parallel equivalent of this network at different frequencies which are present in this switch whatever they are ON or OFF.enCapacitive ModelDouble-Gate MOSFETDP4T SwitchIsolationRadio FrequencyRF SwitchS-Parameter and VLSICapacitive Model and S-Parameters of Double-Pole Four-Throw Double-Gate RF CMOS SwitchArticle