dc.contributor.author | Srivastava, Viranjay M. | |
dc.contributor.author | Yadav, Kalyan S. | |
dc.contributor.author | Singh, Ghanashyam | |
dc.date.accessioned | 2016-10-27T08:10:11Z | |
dc.date.available | 2016-10-27T08:10:11Z | |
dc.date.issued | 2011-01 | |
dc.identifier.citation | Wireless Engineering and Technology, 2011, 2, 15-22 | en_US |
dc.identifier.uri | http://dx.doi.org/10.4236/wet.2011.21003 | |
dc.identifier.uri | http://hdl.handle.net/123456789/1072 | |
dc.description.abstract | In this paper, we have analyzed the Double-Pole Four-Throw Double-Gate Radio-Frequency Complementary Metal-Oxide-Semiconductor (DP4T DG RF CMOS) switch using S-parameters for 1 GHz to 60 GHz of frequency range. DP4T DG RF CMOS switch for operation at high frequency is also analyzed with its capacitive model. The re-sults for the development of this proposed switch include the basics of the circuit elements in terms of capacitance, re-sistance, impedance, admittance, series equivalent and parallel equivalent of this network at different frequencies which are present in this switch whatever they are ON or OFF. | en_US |
dc.language.iso | en | en_US |
dc.publisher | Scientific Research Publishing | en_US |
dc.subject | Capacitive Model | en_US |
dc.subject | Double-Gate MOSFET | en_US |
dc.subject | DP4T Switch | en_US |
dc.subject | Isolation | en_US |
dc.subject | Radio Frequency | en_US |
dc.subject | RF Switch | en_US |
dc.subject | S-Parameter and VLSI | en_US |
dc.title | Capacitive Model and S-Parameters of Double-Pole Four-Throw Double-Gate RF CMOS Switch | en_US |
dc.type | Article | en_US |